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Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level

Identifieur interne : 006957 ( Main/Repository ); précédent : 006956; suivant : 006958

Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level

Auteurs : RBID : Pascal:09-0046076

Descripteurs français

Pascal (Inist)
- Recuit, Caractéristique optique, Caractéristique électrique, Pulvérisation haute fréquence, Couche ITO, Facteur transmission, Microscopie électronique, Spectrophotométrie, Diffraction RX, Facteur réflexion, Fonction diélectrique, Dépendance fréquence, Amortissement, Modèle milieu effectif, Rugosité, Indice réfraction, Mesure électrique, Résistivité couche, Addition étain, Oxyde d'indium, Céramique, ITO, 7866L, 7361L.
Wicri :
- concept : Amortissement, Céramique.

English descriptors

KwdEn :
- Annealing, Ceramics, Damping, Dielectric function, Effective medium model, Electrical characteristic, Electrical measurement, Electron microscopy, Frequency dependence, ITO layers, Indium oxide, Optical characteristic, Radiofrequency sputtering, Reflectivity, Refractive index, Roughness, Sheet resistivity, Spectrophotometry, Tin additions, Transmittance, XRD.

Abstract

Indium tin oxide (ITO) thin films were prepared by RF sputtering of ceramic ITO target in pure argon atmosphere at a high base pressure of 3 × 10^-4 mbar without substrate heating and oxygen admittance. The use of pure argon during deposition resulted in films with high transparency (80-85%) in the visible and IR wavelength region. The films were subsequently annealed in air in the temperature range 100-400 °C. The annealed films show decreased transmittance in the IR region and decreased resistivity. The films were characterized by electron microscopy, spectrophotometry and XRD. The predominant orientation of the films is (222) instead of (400). The transmission and reflection spectra in the wavelength range 300-2500 nm are used to study the optical behaviour of the films. The optical transmittance and reflectance spectra of the films were simultaneously simulated with different dielectric function models. The best fit of the spectrophotometric data was obtained using the frequency-dependent damping constant in the Drude model coupled with the Bruggeman effective medium theory for the surface roughness. It has been found that the sputtering power and the chamber residual pressure play a key role in the resulting optical properties. This paper presents the refractive index profile, the structure determined from the XRD and the electrical properties of ITO films. It has been found from the electrical measurement that films sputtered at 200W power and subsequently annealed at 400 °C have a sheet resistance of 80Ω/□ and resistivity of 1.9 x 10^-3Qcm.

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level</title>
<author><name sortKey="Sathiaraj, T S" uniqKey="Sathiaraj T">T. S. Sathiaraj</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, University of Botswana, P. Bag 0022</s1>
<s2>Gaborone</s2>
<s3>BWA</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Botswana</country>
<wicri:noRegion>Gaborone</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">09-0046076</idno>
<date when="2008">2008</date>
<idno type="stanalyst">PASCAL 09-0046076 INIST</idno>
<idno type="RBID">Pascal:09-0046076</idno>
<idno type="wicri:Area/Main/Corpus">005D57</idno>
<idno type="wicri:Area/Main/Repository">006957</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0959-8324</idno>
<title level="j" type="abbreviated">Microelectronics j.</title>
<title level="j" type="main">Microelectronics journal</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Ceramics</term>
<term>Damping</term>
<term>Dielectric function</term>
<term>Effective medium model</term>
<term>Electrical characteristic</term>
<term>Electrical measurement</term>
<term>Electron microscopy</term>
<term>Frequency dependence</term>
<term>ITO layers</term>
<term>Indium oxide</term>
<term>Optical characteristic</term>
<term>Radiofrequency sputtering</term>
<term>Reflectivity</term>
<term>Refractive index</term>
<term>Roughness</term>
<term>Sheet resistivity</term>
<term>Spectrophotometry</term>
<term>Tin additions</term>
<term>Transmittance</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Recuit</term>
<term>Caractéristique optique</term>
<term>Caractéristique électrique</term>
<term>Pulvérisation haute fréquence</term>
<term>Couche ITO</term>
<term>Facteur transmission</term>
<term>Microscopie électronique</term>
<term>Spectrophotométrie</term>
<term>Diffraction RX</term>
<term>Facteur réflexion</term>
<term>Fonction diélectrique</term>
<term>Dépendance fréquence</term>
<term>Amortissement</term>
<term>Modèle milieu effectif</term>
<term>Rugosité</term>
<term>Indice réfraction</term>
<term>Mesure électrique</term>
<term>Résistivité couche</term>
<term>Addition étain</term>
<term>Oxyde d'indium</term>
<term>Céramique</term>
<term>ITO</term>
<term>7866L</term>
<term>7361L</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Amortissement</term>
<term>Céramique</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Indium tin oxide (ITO) thin films were prepared by RF sputtering of ceramic ITO target in pure argon atmosphere at a high base pressure of 3 × 10<sup>-4</sup>
 mbar without substrate heating and oxygen admittance. The use of pure argon during deposition resulted in films with high transparency (80-85%) in the visible and IR wavelength region. The films were subsequently annealed in air in the temperature range 100-400 °C. The annealed films show decreased transmittance in the IR region and decreased resistivity. The films were characterized by electron microscopy, spectrophotometry and XRD. The predominant orientation of the films is (222) instead of (400). The transmission and reflection spectra in the wavelength range 300-2500 nm are used to study the optical behaviour of the films. The optical transmittance and reflectance spectra of the films were simultaneously simulated with different dielectric function models. The best fit of the spectrophotometric data was obtained using the frequency-dependent damping constant in the Drude model coupled with the Bruggeman effective medium theory for the surface roughness. It has been found that the sputtering power and the chamber residual pressure play a key role in the resulting optical properties. This paper presents the refractive index profile, the structure determined from the XRD and the electrical properties of ITO films. It has been found from the electrical measurement that films sputtered at 200W power and subsequently annealed at 400 °C have a sheet resistance of 80Ω/□ and resistivity of 1.9 x 10<sup>-3</sup>
Qcm.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0959-8324</s0>
</fA01>
<fA03 i2="1"><s0>Microelectronics j.</s0>
</fA03>
<fA05><s2>39</s2>
</fA05>
<fA06><s2>12</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>SATHIARAJ (T. S.)</s1>
</fA11>
<fA14 i1="01"><s1>Physics Department, University of Botswana, P. Bag 0022</s1>
<s2>Gaborone</s2>
<s3>BWA</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA20><s1>1444-1451</s1>
</fA20>
<fA21><s1>2008</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13880</s2>
<s5>354000185059590100</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2009 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>43 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>09-0046076</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Microelectronics journal</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Indium tin oxide (ITO) thin films were prepared by RF sputtering of ceramic ITO target in pure argon atmosphere at a high base pressure of 3 × 10<sup>-4</sup>
 mbar without substrate heating and oxygen admittance. The use of pure argon during deposition resulted in films with high transparency (80-85%) in the visible and IR wavelength region. The films were subsequently annealed in air in the temperature range 100-400 °C. The annealed films show decreased transmittance in the IR region and decreased resistivity. The films were characterized by electron microscopy, spectrophotometry and XRD. The predominant orientation of the films is (222) instead of (400). The transmission and reflection spectra in the wavelength range 300-2500 nm are used to study the optical behaviour of the films. The optical transmittance and reflectance spectra of the films were simultaneously simulated with different dielectric function models. The best fit of the spectrophotometric data was obtained using the frequency-dependent damping constant in the Drude model coupled with the Bruggeman effective medium theory for the surface roughness. It has been found that the sputtering power and the chamber residual pressure play a key role in the resulting optical properties. This paper presents the refractive index profile, the structure determined from the XRD and the electrical properties of ITO films. It has been found from the electrical measurement that films sputtered at 200W power and subsequently annealed at 400 °C have a sheet resistance of 80Ω/□ and resistivity of 1.9 x 10<sup>-3</sup>
Qcm.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H66L</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70C61L</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Recuit</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Annealing</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Caractéristique optique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Optical characteristic</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Característica óptica</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Caractéristique électrique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Electrical characteristic</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Característica eléctrica</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Pulvérisation haute fréquence</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Radiofrequency sputtering</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Pulverización alta frecuencia</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Couche ITO</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>ITO layers</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Facteur transmission</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Transmittance</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Factor transmisión</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Microscopie électronique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Electron microscopy</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Spectrophotométrie</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Spectrophotometry</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>XRD</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Facteur réflexion</s0>
<s5>12</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Reflectivity</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Fonction diélectrique</s0>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Dielectric function</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Dépendance fréquence</s0>
<s5>14</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Frequency dependence</s0>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Amortissement</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Damping</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Modèle milieu effectif</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Effective medium model</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Modelo medio efectivo</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Rugosité</s0>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Roughness</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Indice réfraction</s0>
<s5>18</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Refractive index</s0>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Mesure électrique</s0>
<s5>19</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Electrical measurement</s0>
<s5>19</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Medida eléctrica</s0>
<s5>19</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Résistivité couche</s0>
<s5>20</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Sheet resistivity</s0>
<s5>20</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Addition étain</s0>
<s5>22</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Tin additions</s0>
<s5>22</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>23</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>23</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>23</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Céramique</s0>
<s5>25</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Ceramics</s0>
<s5>25</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>ITO</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>7866L</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>7361L</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fN21><s1>033</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level

Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri